Scientists at Tokyo Tech have developed a novel method using palladium to address contact issues in buried oxide thin film transistors, paving the way for next-generation storage devices and displays. The method injects hydrogen into deeply buried oxide-metal electrode contacts of amorphous oxide semiconductors (AOSs) storage devices, reducing contact resistance.
AOS TFTs are highly sought after for high-density storage devices, but contact issues between AOSs and electrodes result in high contact resistance, impacting charge carrier mobility and power consumption. Traditional methods to mitigate these issues are impractical for buried contacts within complex device architectures.
The research team, led by Assistant Professor Masatake Tsuji and Honorary Professor Hideo Hosono, utilized palladium as a catalyst for hydrogen dissociation and transport to the AOS-electrode interface. This resulted in the formation of a highly conductive oxide layer, significantly reducing contact resistance and improving charge carrier mobility.
The team fabricated amorphous indium gallium oxide (a-IGZO) TFTs with palladium electrodes, treated them in a hydrogen atmosphere, and observed a two-order magnitude decrease in contact resistance and a substantial increase in charge carrier mobility.
Dr. Tsuji highlighted the potential of the method for complex device architectures, stating that it offers a valuable solution for AOS-based storage devices’ contact issues. This breakthrough opens up opportunities for the application of AOS in next-generation memory devices and displays.
